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| trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile lilon battery protection si7404dn vishay siliconix new product document number: 71658 s-05681?rev. c, 07-feb-02 www.vishay.com 1 n-channel 30-v (d-s) fast switching mosfet v ds (v) r ds(on) ( ) i d (a) 0.013 @ v gs = 10 v 13.3 30 0.015 @ v gs = 4.5 v 12.4 0.022 @ v gs = 2.5 v 10.2 1 2 3 4 5 6 7 8 s s s g d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view n-channel mosfet g d s parameter symbol 10 secs steady state unit drain-source voltage v ds 30 gate-source voltage v gs 12 v t a = 25 c 13.3 8.5 continuous drain current (t j = 150 c) a t a = 70 c i d 10.6 6.8 pulsed drain current i dm 40 a single avalanche current i as 15 single a valanche energy (duty cycle 1%) 0.1 mh e as 11 mj continuous source current (diode conduction) a i s 3.2 1.3 a t a = 25 c 3.8 1.5 maximum power dissipation a t a = 70 c p d 2.0 0.8 w operating junction and storage temperature range t j , t stg ?55 to 150 c parameter symbol typical maximum unit t 10 sec 26 33 maximum junction-to-ambient a steady state r thja 65 81 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 c/w notes a. surface mounted on 1? x 1? fr4 board. si7404dn vishay siliconix new product www.vishay.com 2 document number: 71658 s-05681 ? rev. c, 07-feb-02 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a v gs = 10 v, i d = 13.3 a 0.010 0.013 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 12.4 a 0.0125 0.015 v gs = 2.5 v, i d = 5 a 0.019 0.022 forward transconductance a g fs v ds = 15 v, i d = 13.3 a 50 s diode forward voltage a v sd i s = 3.2 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 20 30 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 13.3 a 5.8 nc gate-drain charge q gd 7.1 turn-on delay time t d(on) 27 40 rise time t r v dd = 15 v, r l = 15 39 60 turn-off delay time t d(off) v dd = 15 v, r l = 15 i d 1 a, v gen = 4.5 v, r g = 6 64 100 ns fall time t f 33 50 source-drain reverse recovery time t rr i f = 3.2 a, di/dt = 100 a/ s 45 90 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 10 thru 3 v 25 c t c = 125 c 1, 1.5 v ? 55 c 2 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 2.5 v si7404dn vishay siliconix new product document number: 71658 s-05681 ? rev. c, 07-feb-02 www.vishay.com 3 v sd ? source-to-drain voltage (v) ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 0 1020304050 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 c rss c oss c iss v ds = 15 v i d = 13.3 a v gs = 10 v i d = 13.3 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) t j = 25 c 50 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? source current (a) i s v gs = 4.5 v v gs = 2.5 v v gs = 10 v t j = 150 c i d = 5 a 0.00 0.01 0.02 0.03 0.04 0.05 0246810 i d = 13.3 a si7404dn vishay siliconix new product www.vishay.com 4 document number: 71658 s-05681 ? rev. c, 07-feb-02 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 0.01 0 1 40 50 10 600 single pulse power, juncion-t o-ambient time (sec) 30 20 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.1 ? 0.60 ? 0.45 ? 0.30 ? 0.15 0.00 0.15 0.30 ? 50 ? 25 0 25 50 75 100 125 150 i d = 2 ma threshold voltage variance (v) v gs(th) t j ? temperature ( c) 10 100 |
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